Partner: P. Vennegues


Abstrakty konferencyjne
1.Young T.D., Teisseyre H., Brault J., Kahouli A., Vennegues P., Leroux M., Courville A., de Mierry P., Damilano B., Dłużewski P., Optoelectronic properties of a GaN quantum dot grown on a Al0.5Ga0.5N (1122)-orientated surface, IWN 2012, International Workshop on Nitride Semiconductors, 2012-10-14/10-19, Sapporo (JP), pp.1-2, 2012