Partner: N. Grandjean

École Polytechnique Federale de Lausanne (CH)

Ostatnie publikacje
1.Teisseyre H., Suski T., Łepkowski S.P., Perlin P., Jurczak G., Dłużewski P., Daudin B., Grandjean N., Strong electric field and nonuniformity effects in GaN/AlN quantum dots revealed by high pressure studies, APPLIED PHYSICS LETTERS, ISSN: 0003-6951, DOI: 10.1063/1.2219381, Vol.89, No.5, pp.51902-1-3, 2006

Streszczenie:

The photoluminescence (PL) from GaN quantum dots (QDs) embedded in AlN has been investigated under hydrostatic pressure. The measured pressure coefficient of emitted light energy [dE / dP] shows a negative value, in contrast with the positive pressure coefficient of the GaN band gap. We also observed that increasing pressure leads to a significant decrease of the light emission intensity and an asymmetric broadening of the PL band. All these effects are related to the pressure-induced increase of the built-in electric field. A comparison is made between experimental results and the proposed theoretical model which describes the pressure behavior of nitride QDs.

Słowa kluczowe:

III-V semiconductor, Quantum dot, Piezoelectricity, Photoluminescence

Afiliacje autorów:

Teisseyre H.-Institute of Physics, Polish Academy of Sciences (PL)
Suski T.-Institute of High Pressure Physics, Polish Academy of Sciences (PL)
Łepkowski S.P.-Institute of High Pressure Physics, Polish Academy of Sciences (PL)
Perlin P.-Institute of High Pressure Physics, Polish Academy of Sciences (PL)
Jurczak G.-IPPT PAN
Dłużewski P.-IPPT PAN
Daudin B.-CNRS (FR)
Grandjean N.-École Polytechnique Federale de Lausanne (CH)