Partner: P. Konstantynov

Institute of Physics, Polish Academy of Sciences (PL)

Recent publications
1.Demchenko I.N., Ratajczak R., Melikhov Y., Konstantynov P., Guziewicz E., Valence band of ZnO:Yb probed by resonant photoemission spectroscopy, Materials Science in Semiconductor Processing, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2018.11.037, Vol.91, pp.306-309, 2019
Abstract:

Resonant photoemission spectroscopy (RPES), which is a useful tool for extracting photoemission response of the localized Rare Earth (RE) impurity levels from the host electronic band structure, was used to study ZnO:Yb films. The resonant enhancement of the photoemission signal at binding energy around 7.5 and 11.7 eV was observed when photon energy was tuned to the Yb 4d-4f absorption threshold (182 eV). It was found that the 4f and the valence band (VB) maximum binding energies do not depend on the Yb dose, suggesting that the measurement of only one concentration is sufficient to determine the binding energies of the Yb 4f in the examined system. Subsequent annealing did not change the arrangements of implanted ytterbium atoms in host matrix: the majority of them remain in 3 + state having pseudo-octahedral local arrangement similar to Yb2O3.

Affiliations:
Demchenko I.N.-Institute of Physics, Polish Academy of Sciences (PL)
Ratajczak R.-National Centre for Nuclear Research (PL)
Melikhov Y.-IPPT PAN
Konstantynov P.-Institute of Physics, Polish Academy of Sciences (PL)
Guziewicz E.-Institute of Physics, Polish Academy of Sciences (PL)
2.Demchenko I.N., Syryanyy Y., Melikhov Y., Nittler L., Gladczuk L., Lasek K., Cozzarini L., Dalmiglio M., Goldoni A., Konstantynov P., Chernyshova M., X-ray photoelectron spectroscopy analysis as a tool to assess factors influencing magnetic anisotropy type in Co/MgO system with gold interlayer, SCRIPTA MATERIALIA, ISSN: 1359-6462, DOI: 10.1016/j.scriptamat.2017.10.006, Vol.145, pp.50-53, 2018
Abstract:

X-ray photoelectron spectroscopy (XPS) studies of Au/Co/Au(0.3 nm)/MgO and Au/Co/MgO systems were conducted in order to monitor the electronic structure modification at Co/MgO interface with/without gold interlayer. A detailed analysis of Co 2p states revealed that the amount of minor oxygen contribution at Co/MgO interface decreased after the Au interlayer was added. The obtained XPS results together with density functional theory (DFT) allowed explanation of the increase of surface anisotropy energy in the sample with the gold interlayer in terms of (i) noble and transitional metal d-d orbital hybridization; (ii) interfacial Co 3d and O 2p; and (iii) interface imperfection.

Affiliations:
Demchenko I.N.-Institute of Physics, Polish Academy of Sciences (PL)
Syryanyy Y.-Institute of Physics, Polish Academy of Sciences (PL)
Melikhov Y.-IPPT PAN
Nittler L.-Institute of Physics, Polish Academy of Sciences (PL)
Gladczuk L.-Institute of Physics, Polish Academy of Sciences (PL)
Lasek K.-Institute of Physics, Polish Academy of Sciences (PL)
Cozzarini L.-Elettra-Sincrotrone Trieste S.C.p.A. (IT)
Dalmiglio M.-Elettra-Sincrotrone Trieste S.C.p.A. (IT)
Goldoni A.-Elettra-Sincrotrone Trieste S.C.p.A. (IT)
Konstantynov P.-Institute of Physics, Polish Academy of Sciences (PL)
Chernyshova M.-Institute of Plasma Physics and Laser Microfusion (PL)
3.Demchenko I.N., Melikhov Y., Syryanyy Y., Zaytseva I., Konstantynov P., Chernyshov M., Effect of argon sputtering on XPS depth-profiling results of Si/Nb/Si, JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, ISSN: 0368-2048, DOI: 10.1016/j.elspec.2017.09.009, Vol.224, pp.17-22, 2018
Abstract:

Ultrathin Si/Nb/Si trilayer is an excellent example of a system for which dimensionality effects, together with other factors like type of a substrate material and growth method, influence strongly its superconducting properties. This study offers some important insights into experimental investigation of density of states of such a system with the aim to identify an electronic structure of the interface as a function of niobium layer thickness. For that, two Si/Nb/Si trilayers with 9.5 and 1.3 nm thick niobium layer buried in amorphous silicon were studied using high-resolution (HR) XPS depth-profile techniques. Strong influence of sputtering was observed, which resulted in severe intermixture of Si and Nb atoms. Nevertheless, a sharp top interface and metallic phase of niobium were detected for the thicker layer sample. On the contrary, a Nb-rich mixed alloy at top interface was observed for the thinner layer sample.

Keywords:

High-resolution X-ray photoelectron spectroscopy, XPS, Si/Nb/Si, NbSi, Depth profiling

Affiliations:
Demchenko I.N.-Institute of Physics, Polish Academy of Sciences (PL)
Melikhov Y.-IPPT PAN
Syryanyy Y.-Institute of Physics, Polish Academy of Sciences (PL)
Zaytseva I.-Institute of Physics, Polish Academy of Sciences (PL)
Konstantynov P.-Institute of Physics, Polish Academy of Sciences (PL)
Chernyshov M.-Institute of Plasma Physics and Laser Microfusion (PL)

Conference papers
1.Demchenko I.N., Melikhov Y., Konstantynov P., Ratajczak R., Barcz A., Guziewicz E., Resonant Photoemission Spectroscopy Study on the Contribution of the Yb 4f States to the Electronic Structure of ZnO, ACTA PHYSICA POLONICA A, ISSN: 0587-4246, DOI: 10.12693/APHYSPolA.133.907, Vol.133, No.4, pp.907-909, 2018
Abstract:

The electronic structure of Yb implanted ZnO has been studied by the resonant photoemission spectroscopy. The contribution of the Yb 4f partial density of states is predominant at binding energy about 7.5 and approximate to 11.7 eV below the VB maximum. At photon energy about 182 eV the multiplet structure around 11.7 eV shows the strongest resonance that corresponds to the I-1 multiplet which is almost exclusively responsible for this resonance, while H-3 and F-3 states are responsible for the resonance around 7.5 eV. It was also found that the Yb 4f partial density of states distribution shows some similarity to Yb2O3.

Affiliations:
Demchenko I.N.-Institute of Physics, Polish Academy of Sciences (PL)
Melikhov Y.-IPPT PAN
Konstantynov P.-Institute of Physics, Polish Academy of Sciences (PL)
Ratajczak R.-National Centre for Nuclear Research (PL)
Barcz A.-Institute of Physics, Polish Academy of Sciences (PL)
Guziewicz E.-Institute of Physics, Polish Academy of Sciences (PL)