Institute of Fundamental Technological Research

Spatially resolved X-ray diffraction (SRXRD) is used for micro-imaging of strain in GaAs:Si layers grown by liquid phase epitaxial lateral overgrowth (ELO) on SiO2-masked GaAs substrates. We show that laterally overgrown parts of the layers (wings) are tilted towards the underlying mask. By SRXRD mapping local wing tilt is easily distinguished from macroscopic sample curvature. The direction of the tilt and distribution of tilt magnitude across the width of each layer can also be readily determined. This allows measuring of the shape of the lattice planes in individual ELO stripes. Downward wing tilt disappears completely when the mask is removed by selective etching. Then residual strain in ELO layers is exposed. In particular, upward tilt is found in free-standing ELO wings. Numerical simulations show that this phenomenon is caused by different concentrations of silicon dopant in vertically and laterally grown parts of the layer.