| Partner: W. Trzeciakowski |
Conference papers
| 1. | Bajda M.♦, Piechal B.♦, Maciejewski G., Trzeciakowski W.♦, Majewski J.A.♦, Pressure and Temperature Tuned Semiconductor Laser Diodes, 30th International Conference on the Physics of Semiconductors, 2010-07-25/07-30, Seoul (KR), DOI: 10.1063/1.3666675, pp.917-918, 2011 Abstract: We present results of theoretical studies of the pressure and temperature tuned laser diodes (LDs) based on InGaP/AlGaInP heterostructures taking into account mounting‐induced strains. Our studies reveal that mounting‐induced strains play an important role in the quantitative description of these LDs. We determine their influence on the laser wave‐length tuning by hydrostatic pressure. Keywords:Laser diodes, III-V semiconductors, Heterojunctions, Hydrostatics, Laser theory Affiliations:
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| 2. | Piechal B.♦, Maciejewski G., Bercha A.♦, Reufer M.♦, Gomez-Iglesias A.♦, Trzeciakowski W.♦, Anomalous Energy Shifts Of The QW‐Transitions In Red‐Emitting (Al)InGaP Laser Diodes Tuned By Pressure, 30th International Conference on the Physics of Semiconductors, 2010-07-25/07-30, Seoul (KR), DOI: 10.1063/1.3666694, pp.955-956, 2011 Abstract: We present the differential photocurrent (DPC) measurements made on set of identical (Al)InGaP red emitting lasers under pressures up to 2GPa. We find that the strains applied by the submount change the pressure tuning rate from 80meV/GPa for the samples mounted on compressibility matched submounts down to about 20–50meV/GPa for the ones mounted on hard A1N or diamond submounts. The findings are discussed with the help of finite element (FE) calculations of the strains in the active layers. Keywords:Finite element methods, Active layer, Diamond, Laser diodes, Photoelectric conversion Affiliations:
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