| Partner: M. Bilska |
Conference abstracts
| 1. | Kret S.♦, Bilska M.♦, Ivaldi F.♦, Leszczyński M.♦, Czernecki R.♦, Dłużewski P., Jurczak G., Young T.D., Determination of the nanoscale structural properties of the InAlN based devices by advanced TEM methods, E-MRS 2012 FALL MEETING, 2012-09-17/09-21, Warszawa (PL), pp.1, 2012 Keywords: III-V semiconductors, piezoelectricity, high resolution transmission electron microscopy, band edge structure Affiliations:
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