Institute of Fundamental Technological Research

Photocatalytic CO2 reduction has emerged as a promising strategy for converting solar energy into valuable chemicals, capturing the attention of scientists across various disciplines. Organic and inorganic perovskites, particularly methylammonium lead bromide (MAPbBr3), have demonstrated potential in this field due to their remarkable visible-light response and carrier transport properties. However, the catalytic performance of pristine MAPbBr3 has been limited by severe charge recombination, hindering its applicability in photocatalytic systems. Here, we show that a MAPbBr3/Bi2WO6 (MA/BWO) heterojunction significantly enhances photocatalytic CO2 reduction performance compared to individual pristine MA or BWO. This enhancement is evidenced by the superior performance of the 25% MA/BWO composite, which exhibits CO and CH4 release rates of 1.82 μmol/g/h and 0.08 μmol/g/h, respectively. This improvement is attributed to the direct Z-scheme heterojunction formed between MAPbBr3 and Bi2WO6, which facilitates efficient charge separation and suppresses charge recombination. The results challenge the previous understanding of MAPbBr3-based photocatalysts and demonstrate a novel approach for developing highly active organic and inorganic perovskite photocatalysts. The successful application of the MA/BWO heterojunction in photocatalytic CO2 reduction expands the scope of organic and inorganic perovskites in the field of renewable energy conversion. By providing a broader perspective, our findings contribute to the ongoing efforts towards sustainable energy solutions, appealing

A simple and inexpensive method for the controlled loading of silica particles with dyes and nanocrystals is presented. Polydiallyldimethylammonium chloride is used as a positively charged bridge to facilitate electrostatic adsorption of negatively charged dyes onto negatively charged silica microspheres. The particles are subsequently coated with a further silica shell to protect the dyes against chemical degradation and leakage and this shell affords a unform particle surface independent of its doping. This encapsulation method is highly versatile and can be extended to doping with semiconductor nanocrystals, which we demonstrate using CdSe/ZnS core/shell quantum dots. The synthesis steps and end products are characterized with electron microscopy, optical spectroscopy and the electrokinetic potential of the colloidal suspensions. We show that the particles adapt the optical properties of their dopants and are resistant to degradation, dopant leakage and show reasonable emission even at acidic pH values due to the protective shell.

Silica particles, Dye, Quantum dot, Polydiallyldimethylammonium chloride, Doping

New semiconducting metal oxides of various compositions are of great interest for efficient solar water oxidation. In this report, Mo-doped SnO2 (Mo:SnO2) thin films deposited by reactive magnetron co-sputtering in the Ar and O2 gas environment are studied. The Sn to Mo ratio in the films can be controlled by changing the O2 partial pressure and the deposition power of the Sn and Mo targets. Increasing the Mo concentration in the film leads to the increase in the oxygen vacancy density, which limits the maximum achievable photocurrent density. The thin films exhibit a direct band gap of 2.7 eV, the maximum achievable photocurrent density of 0.6 mA cm^−2 at 0 VRHE and the onset potential of 0.14 VRHE. The incident photon to current transfer (IPCE) efficiency of 22% is shown at a 450 nm wavelength. The initial performance of the Mo:SnO2 thin films is evaluated for solar water oxidation.

Mo:SnO2, thin films, photoanode, photocurrent density, Sn/mo ratio, band gap

Semiconducting ternary metal oxide thin films exhibit a promising application for solarenergy conversion. However, the efficiency of the conversion is still limited by a band gapof a emiconductor, which determines an obtainable internal photovoltage for solar watersplitting. In this report the tunability of the tin tungstate band gap by O2 partial pressurecontrol in the magnetron co-sputtering process is shown. A deficiency in the Sn concentration increases the optical band gap of tin ungstate thin films. The optimum band gap of 1.7 eV for tin tungstate films is achieved for a Sn to W ratio at unity, which establishes thehighest photoelectrochemical activity. In particular, a maximum photocurrent density of 0.375 mA cm^2 at 1.23 VRHE and the lowest reported onset potential of -0.24 VRHE for SnWO4 thin films without any co-catalyst are achieved. Finally, we demonstrate that a Ni protection layer on the SnWO4 thin film enhances the photoelectrochemical stability, which isof paramount importance for application.

thin film, tin tungstate, reactive magnetron sputtering, photocurrent density, thickness band gap