Institute of Fundamental Technological Research

The changes in the optical, structural, mechanical properties, and chemical composition of Y3Fe5O12/Gd3Ga5O12 (YIG/GGG) single crystal structures grown by liquid phase epitaxy, particularly at the interface between the film (Y3Fe5O12) and the substrate (Gd3Ga5O12), are studied. Different complementary techniques, including optical microscopy, local spectrophotometry, electron probe microanalysis, micro-Raman spectroscopy, and nanohardness analysis are used. The main finding of the study is an experimental approach, in which the probe of the measuring device (light beam, electron beam, nanoindenter) is directed to the surface of the studied sample in a direction perpendicular to the direction of structure growth, and the surface is scanned along this direction. It allows to obtain the profiles of changes in refractive properties, nanohardness, optical absorption, chemical composition, and intensity of phonon spectrum bands at the transition from the GGG to YIG. It is established that the lengths of the scanning intervals, at which the changes of various properties of a specimen occur, differ significantly. The obtained results are affected by the size of the probes and by the sensitivities of both the particular measuring method and the particular physical property of the material to changes in the chemical composition and crystalline structure of the sample.

electron probe microanalysis, gadolinium gallium garnet, interface, nanohardness, Raman scattering, spectrophotometry, yttrium iron garnet

We used high hydrostatic pressure to perform photoluminescence measurements on polar ZnO/ZnMgO quantum well structures. Our structure oriented along the c-direction (polar direction) was grown by plasma-assisted molecular beam epitaxy on a-plane sapphire. Due to the intrinsic electric field, which exists in polar wurtzite structure at ambient pressure, we observed a red shift of the emission related to the quantum-confined Stark effect. In the high hydrostatic pressure experiment, we observed a strong decrease of the quantum well pressure coefficients with increased thickness of the quantum wells. Generally, a narrower quantum well gave a higher pressure coefficient, closer to the band-gap pressure coefficient of bulk material 20 meV/GPa for ZnO, while for wider quantum wells it is much lower. We observed a pressure coefficient of 19.4 meV/GPa for a 1.5 nm quantum well, while for an 8 nm quantum well the pressure coefficient was equal to 8.9 meV/GPa only. This is explained by taking into account the pressure-induced increase of the strain in our structure. The strain was calculated taking in to account that in-plane strain is not equal (due to fact that we used a-plane sapphire as a substrate) and the potential distribution in the structure was calculated self-consistently. The pressure induced increase of the built-in electric field is the same for all thicknesses of quantum wells, but becomes more pronounced for thicker quantum wells due to the quantum confined Stark effect lowering the pressure coefficients.

Piezoelectric fields, Quantum wells, Polarization, Zinc oxide films, High pressure