Partner: S. Dvoretsky

A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences (RU)

Abstrakty konferencyjne
1.Izhnin I., Voitsekhovskii A., Korotaev A., Fitsych O., Bonchyk O., Savytskyy H., Mynbaev K., Varavin V., Dvoretsky S., Mikhailov N., Yakushev M., Jakiela R., Levintant-Zayonts N., Electrical and optical properties of arsenic - implanted Cdx Hg1-x Te MBE films, ION 2016, XI International Conference ION IMPLANTATION AND OTHER APPLICATIONS OF IONS AND ELECTRONS, 2016-06-13/06-16, Kazimierz Dolny (PL), pp.72, 2016