| 1. | Young T.D., Marquardt O.♦, Influence of strain and polarization on electronic properties of a GaN/AlN quantum dot, IWN 2008, International Workshop on Nitride Semiconductors, 2008-10-06/10-10, Montreux (CH), DOI: 10.1002/pssc.200880901, Vol.6, No.S2, pp.S557-S560, 2009 Streszczenie: It is known that heterojunctions give rise to changes in the elastic and piezoelectric properties of a given semiconductor nanostructure. For practical applications it is decisive to understand the influence of these strain and piezoelectric fields on the electronic response of these systems, both as distinct and as coupled fields. In the present study, the confinement properties of the electron and hole wavefunctions are of interest. Therefore, a model based on a traditional envelope 8-band k · p Hamiltonian is implemented and used to explore a GaN/AlN quantum dot/matrix system. Afiliacje autorów: | Young T.D. | - | IPPT PAN | | Marquardt O. | - | Max-Planck-Institut für Eisenforschung (DE) |
|  | 10p. |
