Partner: J. Thibault

Université Paul Cézanne (FR)

Prace konferencyjne
1.Alexandre L., Jurczak G., Alfonso C., Saikly W., Grosjean C., Charai A., Thibault J., Microscopy of semiconducting materials CBED and FE study of thin foil relaxation in cross-section samples of Si/SiGe and Si/SiGe/Si heterostructures, Proceedings in Physics, ISSN: 0930-8989, DOI: 10.1007/978-1-4020-8615-1_90, Vol.120, pp.415-418, 2008

Słowa kluczowe:

Convergent-beam electron diffraction, elastic strain relaxation, finite element modelling

Afiliacje autorów:

Alexandre L.-CNRS (FR)
Jurczak G.-IPPT PAN
Alfonso C.-CNRS (FR)
Saikly W.-Université Paul Cézanne (FR)
Grosjean C.-ST Microelectronics (RCCAL) (FR)
Charai A.-CNRS (FR)
Thibault J.-Université Paul Cézanne (FR)