| Partner: I. Häusler |
|
Ostatnie publikacje
| 1. | Dimitrakopulos G.P.♦, Kalesaki E.♦, Kioseoglou J.♦, Kehagias T.♦, Lotsari A.♦, Lahourcade L.♦, Monroy E.♦, Häusler I.♦, Kirmse H.♦, Neumann W.♦, Jurczak G., Young T.D., Dłużewski P., Komninou Ph.♦, Karakostas T.♦, Morphology and strain of self-assembled semi-polar GaN quantum dots in (1112) AlN, JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979, DOI: 10.1063/1.3506686, Vol.108, pp.104304-1-9, 2010 Streszczenie: GaN quantum dots (QDs) grown in semipolar (11-22) AlN by plasma-assisted molecular-beam epitaxy were studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy techniques. The embedded (11-2)-grown QDs exhibited pyramidal or truncated-pyramidal morphology consistent with the symmetry of the nucleating plane, and were delimited by nonpolar and semipolar nanofacets. It was also found that, in addition to the (11-22) surface, QDs nucleated at depressions comprising {10-11} facets. This was justified by ab initio density functional theory calculations showing that such GaN/AlN facets are of lower energy compared to (11-22). Based on quantitative high-resolution TEM strain measurements, the three-dimensional QD strain state was analyzed using finite-element simulations. The internal electrostatic field was then estimated, showing small potential drop along the growth direction, and limited localization at most QD interfaces. Słowa kluczowe: Quantum dots, Transmission electron microscopy, III-V semiconductors, High resolution transmission electron microscopy, Epitaxy Afiliacje autorów:
|  | 32p. |