| Partner: Gerard Nouet |
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Ostatnie publikacje
| 1. | Dłużewski P., Jurczak G., Maciejewski G., Kret S.♦, Ruterana P.♦, Nouet G.♦, Finite Element Simulation of Residual Stresses in Epitaxial Layers, Materials Science Forum (MSF), ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/MSF.404-407.141, Vol.404-407, pp.141-146, 2002 Streszczenie: A nonlinear finite element approach presented here is based on the constitutive equations for anisotropic hyperelatic materials. By digital image processing the elastic incompatibilities (lattice mismatch) are extracted from the HRTEM image of GaN epilayer. Such obtained tensorial field of dislocation distribution is used next as the input data to the FE code. This approach is developed to study the stress distribution associated with lattice defects in highly mismatched heterostructures applied as buffer layers for the optically active structures. Słowa kluczowe: Dislocations, Anisotropic Hyperelasticity, Residual Stresses Afiliacje autorów:
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Prace konferencyjne
| 1. | Dłużewski P., Belkadi A., Chen J.♦, Ruterana P.♦, Nouet G.♦, FE simulation of InGaN QD formation at the edge of threading dislocation in GaN, IWN 2006, International Workshop on Nitride Semiconductors, 2006-10-22/0-27, Kyoto (JP), DOI: 10.1002/pssc.200674870, Vol.7, pp.2403-2406, 2007 Streszczenie: The stress induced diffusion process of In-Ga segregation in InxGa1–xN layer deposited on GaN is simulated step by step by using a 3D nonlinear FE method. From the thermodynamical point of view this process is governed by the driving force induced by the gradient of residual stresses operating in an anisotropic nonlinear elastic structure. The source of stresses we consider is the set of threading dislocations examined in the plane view HRTEM investigation of GaN layer deposited on sapphire. Afiliacje autorów:
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