Partner: B. Daudin

CNRS (FR)

Ostatnie publikacje
1.Teisseyre H., Suski T., Łepkowski S.P., Perlin P., Jurczak G., Dłużewski P., Daudin B., Grandjean N., Strong electric field and nonuniformity effects in GaN/AlN quantum dots revealed by high pressure studies, APPLIED PHYSICS LETTERS, ISSN: 0003-6951, DOI: 10.1063/1.2219381, Vol.89, No.5, pp.51902-1-3, 2006

Streszczenie:

The photoluminescence (PL) from GaN quantum dots (QDs) embedded in AlN has been investigated under hydrostatic pressure. The measured pressure coefficient of emitted light energy [dE / dP] shows a negative value, in contrast with the positive pressure coefficient of the GaN band gap. We also observed that increasing pressure leads to a significant decrease of the light emission intensity and an asymmetric broadening of the PL band. All these effects are related to the pressure-induced increase of the built-in electric field. A comparison is made between experimental results and the proposed theoretical model which describes the pressure behavior of nitride QDs.

Słowa kluczowe:

III-V semiconductor, Quantum dot, Piezoelectricity, Photoluminescence

Afiliacje autorów:

Teisseyre H.-Institute of Physics, Polish Academy of Sciences (PL)
Suski T.-Institute of High Pressure Physics, Polish Academy of Sciences (PL)
Łepkowski S.P.-Institute of High Pressure Physics, Polish Academy of Sciences (PL)
Perlin P.-Institute of High Pressure Physics, Polish Academy of Sciences (PL)
Jurczak G.-IPPT PAN
Dłużewski P.-IPPT PAN
Daudin B.-CNRS (FR)
Grandjean N.-École Polytechnique Federale de Lausanne (CH)